Modeling of Dispersive Millimeter-Wave GaN HEMT Devices for High Power Amplifier Design
Science for Systems, Band 23
Dirk Schwantuschke
Hrsg.: Oliver Ambacher; Fraunhofer IAF, Freiburg
2016, ca. 200 S., num., mostly col. illus. and tab., Softcover
Sprache: Englisch
Stuttgart, Univ., Diss., 2015
Fraunhofer Verlag
ISBN 978-3-8396-0985-9

zur Open Access Version

Inhalt
In recent years, monolithic integrated power amplifiers based on gallium nitride (GaN) have become an ideal candidate to meet the increasing demand for high solid-state power levels of today's and future millimeter-wave (mm-wave) systems. The heterostructure aluminum gallium nitride/gallium nitride (AlGaN/GaN) high electron mobility transistor devices outperform comparable state-of-the-art semiconductor technologies due to their superior fundamental properties regarding high-power and high-frequency applications. Therefore, a 100 nm AlGaN/GaN technology was developed by the Fraunhofer IAF which is intended for the realization of high-frequency transistors as well as high-power amplifiers for mm-wave frequency applications. The computer-aided design of such power amplifiers requires a scalable nonlinear model of the active transistor devices. Thereby, the nonlinear model must be capable to take low-frequency dispersion and memory effects into account, which are present in the considered mm-wave GaN technology. An elegant way to describe such dispersive devices is a state-space modeling approach. Therefore, this thesis addresses the development of a scalable state-space transistor model and its verification and applicability in terms of the design of two power amplifiers, a broadband and a high-power amplifier.

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